First-principles investigation of graphene/MoS2 bilayer heterostructures using Tkatchenko-Scheffler van der Waals method
Sobhit Singh, Camilo Espejo, Aldo H. Romero

TL;DR
This study uses first-principles calculations with the Tkatchenko-Scheffler van der Waals method to accurately model graphene/MoS2 heterostructures, resolving previous discrepancies in interlayer spacing and electronic properties.
Contribution
It demonstrates the effectiveness of the Tkatchenko-Scheffler method in predicting interlayer spacing and explores the electronic, vibrational, and mechanical properties of graphene/MoS2 heterostructures with different lattice mismatches.
Findings
Accurately predicts interlayer spacing using Tkatchenko-Scheffler vdW method.
Identifies the impact of interlayer spacing on electronic properties.
Highlights the role of phonon modes in thermal behavior.
Abstract
Graphene/MoS van der Waals (vdW) heterostructures have promising technological applications due to their unique properties and functionalities. Many experimental and theoretical research groups across the globe have made outstanding contributions to benchmark the properties of graphene/MoS heterostructures. Even though some research groups have already made an attempt to model the graphene/MoS heterostructures using {\it first-principles} calculations, there exists several discrepancies in the results from different theoretical research groups and the experimental findings. In the present work, we revisit this problem by first principles approach and address the existing discrepancies about the interlayer spacing between graphene and MoS monolayers in graphene/MoS heterostructures, and the location of Dirac points near Fermi-level. We find that the…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
