Electroforming Free Controlled Bipolar Resistive Switching in Al/CoFe2O4/FTO device with Self-Compliance Effect

TL;DR

This study demonstrates an electroforming-free, low-power bipolar resistive switching device using Al/CoFe2O4/FTO with self-compliance, showing stable, uniform resistance states suitable for nonvolatile memory applications.

Contribution

The paper reports a novel Al/CoFe2O4/FTO device exhibiting electroforming-free bipolar resistive switching with self-compliance, enhancing stability and power efficiency for ReRAM technology.

Findings

Electroforming-free bipolar resistive switching observed

Low switching voltage (<1V) and low current operation

Good endurance and stable resistance states

Abstract

Controlled bipolar resistive switching (BRS) has been observed in nanostructured CoFe2O4 films using Al(aluminum)/CoFe2O4/FTO(fluorine-doped tin oxide) device. The fabricated device shows electroforming-free uniform BRS with two clearly distinguished and stable resistance states without any application of compliance current (CC), with a resistance ratio of high resistance state (HRS) and low resistance state (LRS) > 102. Small switching voltage (< 1 volt) and lower current in both the resistance states confirms the fabrication of low power consumption device. In the LRS, the conduction mechanism was found to be of Ohmic in nature, while the high-resistance state (HRS/OFF state) was governed by space charge-limited conduction mechanism, which indicates the presence of an interfacial layer with imperfect microstructure near the top Al/CFO interface. The device shows nonvolatile behavior with good endurance properties, acceptable resistance ratio, uniform resistive switching due to stable, less random filament formation/rupture and a control over the resistive switching properties by choosing different stop voltages, which makes the device suitable for its application in future nonvolatile resistive random access memory (ReRAM).