Structural and electronic properties of V2O5 and their tuning by doping with 3d elements - Modelling with DFT+U method and dispersion correction
A. Jovanovi\'c (1, 2), A. S. Dobrota (1), L. D. Rafailovi\'c (2),, S. V. Mentus (1, 3), I. A. Pa\v{s}ti (1, 4), B. Johansson (4, 5), N., V. Skorodumova (4, 5) ((1) University of Belgrade - Faculty of Physical, Chemistry, Belgrade, Serbia

TL;DR
This study demonstrates that combining DFT+U with dispersion correction accurately models V2O5's structure and electronic properties, and reveals doping with 3d elements enhances its conductivity for battery applications.
Contribution
It introduces a PBE+U+D2 computational approach that improves modeling accuracy of V2O5 and explores doping effects on its properties.
Findings
PBE+U+D2 reproduces experimental band gap and lattice parameters.
Doping with 3d elements increases V2O5 conductivity.
Structural and electronic properties are significantly affected by doping.
Abstract
New electrode materials for alkaline-ion batteries are a timely topic. Among many promising candidates, V2O5 is one of the most interesting cathode materials. While having very high theoretical capacity, in practice, its performance is hindered by low stability and poor conductivity. As regards theoretical descriptions of V2O5, common DFT-GGA calculations fail to reproduce both the electronic and crystal structure. While the band gap is underestimated, the interlayer spacing is overestimated as weak dispersion interactions are not properly described within GGA. Here we show that the combination of the DFT+U method and semi-empirical D2 correction can compensate for the drawbacks of the GGA approximation when it comes to the modelling of V2O5. When compared to common PBE calculations, with a modest increase of the computational cost, PBE+U+D2 fully reproduced the experimental band gap of…
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