RF assisted switching in magnetic Josephson junctions

TL;DR

This paper investigates how applying external RF fields influences magnetic Josephson junctions, demonstrating improved switching performance and potential for advanced cryogenic memory applications.

Contribution

It introduces RF-assisted switching as a novel method to enhance magnetic Josephson junction performance and control memory states.

Findings

RF fields increase current level separation by up to 80%

RF and magnetic pulses together improve device performance

External RF fields enable new control methods for memory states

Abstract

We test the effect of an external RF field on the switching processes of magnetic Josephson junctions (MJJs) suitable for the realization of fast, scalable cryogenic memories compatible with Single Flux Quantum logic. We show that the combined application of microwaves and magnetic field pulses can improve the performances of the device, increasing the separation between the critical current levels corresponding to logical '0' and '1'. The enhancement of the current level separation can be as high as 80% using an optimal set of parameters. We demonstrate that external RF fields can be used as an additional tool to manipulate the memory states, and we expect that this approach may lead to the development of new methods of selecting MJJs and manipulating their states in memory arrays for various applications.