Microwave-Activated Controlled-Z Gate for Fixed-Frequency Fluxonium Qubits
Konstantin N. Nesterov, Ivan V. Pechenezhskiy, Chen Wang, Vladimir E., Manucharyan, Maxim G. Vavilov

TL;DR
This paper presents a microwave-activated controlled-Z gate for fixed-frequency fluxonium qubits, achieving high fidelity and fast operation by exploiting the fluxonium's anharmonic spectrum and a resonance involving the second excited state.
Contribution
It introduces a new method for implementing a high-fidelity, fast controlled-Z gate in fixed-frequency fluxonium qubits using microwave activation at a specific resonance.
Findings
Gate fidelity over 99.9% estimated
Gate times below 100 ns achieved
Compatible with capacitive and inductive couplings
Abstract
The superconducting fluxonium circuit is an artificial atom with a strongly anharmonic spectrum: when biased at a half flux quantum, the lowest qubit transition is an order of magnitude smaller in frequency than those to higher levels. Similar to conventional atomic systems, such a frequency separation between the computational and noncomputational subspaces allows independent optimizations of the qubit coherence and two-qubit interactions. Here we describe a controlled-Z gate for two fluxoniums connected either capacitively or inductively, with qubit transitions fixed near 500 MHz. The gate is activated by a microwave drive at a resonance involving the second excited state. We estimate intrinsic gate fidelities over 99.9% with gate times below 100 ns.
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