Characterization, optical properties and electron(exciton)-phonon interaction in bulk In2Se3 crystals and InSe nanocrystals in In2nSe3 confinement
Yu.I. Zhirko, V.M. Grekhov, Z.D. Kovalyuk

TL;DR
This study investigates the optical properties and electron-phonon interactions in bulk In2Se3 crystals and InSe nanocrystals within In2Se3, revealing insights into band-gap behavior, exciton dynamics, and nanocrystal effects.
Contribution
It provides a comprehensive analysis of electron-phonon interactions and optical properties in In2Se3 and InSe nanocrystals, highlighting the effects of nanocrystal size and confinement.
Findings
Determined the band-gap width and exciton binding energy of In2Se3.
Identified the frequency of the half-layer A-phonon involved in electron-phonon interactions.
Observed a blue shift of the band-gap in InSe nanocrystals confined in In2Se3.
Abstract
Complex electron-microscopic, energy-dispersed and wide-temperature optical absorption and photoluminescence (PL) investigations are carried out into Bridgeman-grown layered In2Se3 crystals. It is shown that In2Se3 crystals as a whole have a homogeneous concentration of In and Se atoms, corresponding with In2Se3 stoichiometry. Nevertheless, In2Se3 crystals contain a significant amount of dislocations, on which nano-sized interspersions of crystal phases of pure InSe, In6Se7 and monoclinic red Se settle down. Optical wide-temperature investigations of In2Se3 allow us to do the following: establish the width of the band-gap, the exciton binding energy; determine the frequency of a half-layer A-phonon, which takes part in electron (exciton)-phonon interaction; and to evaluate the effective masses of carriers and the dielectric permeability. Finally, blue shift of the band-gap and character…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · 2D Materials and Applications · Solid-state spectroscopy and crystallography
