Bright single InAsP quantum dots at telecom wavelengths in position-controlled InP nanowires: the role of the photonic waveguide

TL;DR

This paper demonstrates site-controlled growth of bright single InAsP quantum dots within InP nanowire waveguides, achieving high emission rates and tunability at telecom wavelengths, advancing single photon source technology.

Contribution

It introduces a method for site-selected growth of InAsP quantum dots in nanowires with optimized waveguides for telecom emission, significantly enhancing brightness and wavelength tunability.

Findings

Emission rate increased nearly 100-fold with optimized waveguides.

Achieved bright, narrow linewidth emission from 880nm to 1550nm.

Demonstrated potential for efficient telecom wavelength single photon sources.

Abstract

We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in count rate by nearly two orders of magnitude (0.4kcps to 35kcps) is obtained for quantum dots emitting in the telecom O-band. Using emission-wavelength-optimised waveguides, we demonstrate bright, narrow linewidth emission from single InAsP quantum dots with an unprecedented tuning range from 880nm to 1550nm. These results pave the way towards efficient single photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.