Exploring the energy landscape of resistive switching in antiferromagnetic Sr(3)Ir(2)O(7)

TL;DR

This study investigates the resistive switching mechanism in antiferromagnetic Sr(3)Ir(2)O(7), revealing how the energy barrier decreases linearly with applied bias, highlighting its potential for spintronic devices.

Contribution

It provides the first time-resolved measurements linking electrical bias to energy barrier changes in antiferromagnetic Mott insulators.

Findings

Energy barrier decreases linearly with bias

Switching involves an electric-field driven structural transition

Supports potential for spintronic applications

Abstract

We study the resistive switching triggered by an applied electrical bias in antiferromagnetic Mott insulator Sr(3)Ir(2)O(7). The switching was previously associated with an electric-field driven structural transition. Here we use time-resolved measurements of the switching to probe the energy barrier associated with the transition. We quantify the changes in the energy barrier height with respect to the applied bias and find a linear decrease of the barrier with increasing bias. Our observations support the potential of antiferromagnetic transition metal oxides for spintronic applications.