Investigation of the Electronical and Optical Properties of Quantum Well Lasers with Slightly Doped Tunnel Junction

TL;DR

This study compares the electrical and optical properties of GaAs-based quantum well laser diodes with slightly-doped tunnel junctions to conventional diodes, revealing differences in efficiency, spectrum, and current dynamics.

Contribution

It provides the first experimental analysis of how slightly-doped tunnel junctions affect the performance of quantum well laser diodes.

Findings

TJ LD shows nonlinear S-shape I-V characteristic

Internal quantum efficiency is significantly higher in conventional LD (87.3%) than TJ LD (21%)

TJ LD achieves a 15 nm broadband spectrum due to current dynamics

Abstract

We experimentally investigate and analyze the electrical and optical characteristics of GaAs-based conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. It was found that TJ LD show a nonlinear S-shape I-V characteristic.It was also found that the internal quantum efficiency measured by 21% and 87.3% for the TJ LD and the conventional LD, respectively. Furthermore, compared with the conventional LD, it was found that we could achieve 15 nm broadband spectrum from the TJ LD due to lasing dynamics reflects the current dynamics. The results may also lead to the realization of more applications.