Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor

TL;DR

This paper investigates the physical origins of interface degradation in monolayer MoS2 FETs by analyzing interface state density and quantum capacitance, revealing insights into the role of interface traps and material strain.

Contribution

It introduces a novel Dit extraction method based on quantum capacitance analysis and links interface disorder to Mo-S bond bending and surface roughness.

Findings

Dit has a band tail distribution with a minimum of 8×10^11 cm^-2eV^-1.

Interface traps and quantum capacitance influence the metal/insulator transition.

Ultra-thin 2D materials are more sensitive to interface disorder.

Abstract

Although MoS2 field-effect transistors (FETs) with high-k dielectrics are promising for electron device applications, the underlying physical origin of interface degradation remains largely unexplored. Here, we present a systematic analysis of the energy distribution of the interface state density (Dit) and the quantum capacitance (CQ) in a dual-gate monolayer exfoliated MoS2 FET. The CQ analysis enabled us to construct a Dit extraction method as a function of EF. A band tail distribution of Dit with the lowest value of 8*1011 cm-2eV-1 suggests that Dit is not directly related to the sharp peak energy distribution of the S vacancy. Therefore, the Mo-S bond bending related to the strain at the interface or the surface roughness of the SiO2/Si substrate might be the origin. It is also shown that ultra-thin 2D materials are more sensitive to interface disorder due to the reduced density of states. Since all the constituents for the measured capacitance are well understood, I-V characteristics can be reproduced by utilizing the drift current model. As a result, one of the physical origins of the metal/insulator transition is suggested to be the external outcome of interface traps and quantum capacitance.