The influence of a strong infrared radiation field on the conductance properties of doped semiconductors

TL;DR

This paper analytically investigates how a strong infrared radiation field can significantly enhance the conductance of doped semiconductors by affecting electron scattering processes.

Contribution

It provides an analytic formula for electron scattering cross sections in the presence of strong infrared fields, revealing potential conductance enhancement in doped semiconductors.

Findings

Electron conductance can increase by an order of magnitude with infrared fields.

Infrared intensity range of 10^{11} to 10^{13} W/cm^2 is effective.

Analytic model for field-assisted electron scattering in semiconductors.

Abstract

This work presents an analytic angular differential cross section formula for the electromagnetic radiation field assisted electron scattering by %% was on impurities in semiconductors. These impurities are approximated with various model potentials. The scattered electrons are described by the well-known Volkov wave function, which has been used describe strong laser field matter interaction for more than half a century, %% I would remove this time reference for clarity which exactly describes the interaction of the electron with the external oscillating field. These calculations show that the electron conductance in a semiconductor could be enhanced by an order of magnitude if an infrared electromagnetic field is present with $ 10^{11} < I < 10^{13}$ W/cm$^2$ intensity.