Band alignments of electronic energy structure in epitaxially grown \b{eta}-Ga2O3 layers

TL;DR

This paper investigates the electronic energy structure and band alignments of epitaxially grown eta-Ga2O3 layers using X-ray photoelectron spectroscopy, optical reflectance, and DFT calculations to understand their electronic properties.

Contribution

It combines experimental XPS and optical measurements with DFT calculations to analyze band alignments in eta-Ga2O3 epitaxial layers, providing new insights into their electronic structure.

Findings

Determined band alignments of eta-Ga2O3 layers.

Correlated experimental data with theoretical calculations.

Enhanced understanding of electronic properties in epitaxial eta-Ga2O3.

Abstract

Gallium oxide epitaxial layers grown on native substrates and basal plane sapphire were characherized by X-ray phtotelectron and optical reflectance spectroscopies. The XPS electronic structure mapping was coupled to Density functional theory calculations.