Memristor properties of high temperature superconductors

TL;DR

This paper reviews the memristive properties of high temperature superconductors, highlighting their functional behaviors and potential for memristor applications, and discusses mechanisms for developing HTSC-based memristor structures.

Contribution

It provides a comprehensive review of the memristive effects in HTSCs and proposes new mechanisms for realizing memristors using their unique properties.

Findings

HTSCs exhibit resistive switching and memristive effects.

Functional properties like metal-insulator transition enable memristor use.

Potential for HTSC-based memristor applications is demonstrated.

Abstract

The review of studies on memristive properties or effect of resistive switchings in four classes of high temperature superconductors is presented in order to reveal functional properties of HTSCs which become apparent in the effects under discussion, prospects of usage of high temperature superconductors based memristors in applications and search for new mechanisms of strongly correlated nature to realize new generation memristors. The properties are: undergoing metal insulator transition at oxygen doping, transport anisotropy, existence of charge reservoirs through which doping of conductive copper oxygen layers is carried out. These are the main functional properties of HTSCs which permit to use them in memristors. By the example of study of bipolar effect of resistive switching in high temperature superconductors based heterojunctions it is shown how one can form memristor structures based on high temperature superconductors using their functional properties.