Band-pass superlattice magnetic tunnel junctions
Abhishek Sharma, Ashwin. A. Tulapurkar, and Bhaskaran Muralidharan

TL;DR
This paper introduces band-pass superlattice magnetic tunnel junctions that utilize optical-like phenomena to significantly enhance tunnel magneto-resistance and reduce switching bias, advancing spintronics device performance.
Contribution
It proposes a novel superlattice heterostructure design for magnetic tunnel junctions that exploits anti-reflection and Fabry-Pérot resonances for improved spin filtering.
Findings
Achieved approximately 50,000% tunnel magneto-resistance.
Demonstrated 92% reduction in spin transfer torque switching bias.
Predicted enhanced device performance using non-equilibrium Green's function simulations.
Abstract
Significant scientific and technological progress in the field of spintronics is based on trilayer magnetic tunnel junction devices which principally rely on the physics of single barrier tunneling. While technologically relevant devices have been prototyped, the physics of single barrier tunneling poses ultimate limitations on the performance of magnetic tunnel junction devices. Here, we propose a fresh route toward high performance magnetic tunnel junctions by making electronic analogs of optical phenomena such as anti-reflections and Fabry-P\`erot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on the non-equilibrium Green's function spin transport formalism coupled self-consistently with the…
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