The Nitrogen concentration effect on Ce doped SiOxNy emission: towards optimized Ce3+ for DEL applications
F Ehr\'e (CIMAP - UMR 6252), C. Labb\'e (CIMAP - UMR 6252), C Dufour, (IEMN), W Jadwisienczak, J. Weimmerskirch-Aubatin (CIMAP - UMR 6252), X, Portier (CIMAP - UMR 6252), J.-L Doualan (CIMAP - UMR 6252), J Cardin (CIMAP, - UMR 6252), A. Richard, D Ingram

TL;DR
This study investigates how nitrogen concentration affects Ce3+ emission in SiOxNy films, revealing optimal conditions for enhanced visible photoluminescence relevant to display and lighting applications.
Contribution
It demonstrates that nitrogen modifies Ce3+ emission by altering local environments, enabling high Ce3+ concentrations without clustering, and identifies nitrogen as a key parameter for emission optimization.
Findings
Ce3+ ions are present regardless of nitrogen levels.
High nitrogen reduces silicate phase formation and Ce clustering.
Optimal nitrogen flow enhances visible emission at 450 nm.
Abstract
Ce-doped SiO x N y films are deposited by magnetron reactive sputtering from a CeO 2 target under nitrogen reactive gas atmosphere. Visible photoluminescence measurements regarding the nitrogen gas flow reveal a large emission band centered at 450 nm for a sample deposited under a 2 sccm flow. A special attention is paid to the origin of such an emission at high nitrogen concentration. Different emitting centers are suggested in Ce doped SiO x N y films (e.g. band tails, CeO 2, Ce clusters, Ce 3+ ions), with different activation scenarios to explain the luminescence. X-ray photoelectron spectroscopy (XPS) reveals the exclusive presence of Ce 3+ ions whatever the nitrogen or Ce concentrations, while transmission electron microscopy (TEM) shows no clusters or silicates upon high temperature annealing. With the help of photoluminescence excitation spectroscopy (PLE), a wide excitation…
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