Voltage-induced precessional switching at zero-bias magnetic field in a conically magnetized free layer

TL;DR

This paper demonstrates theoretically that voltage pulses can induce magnetization precessional switching at zero magnetic bias in a conically magnetized free layer, advancing voltage-controlled magnetic memory technology.

Contribution

It provides analytical conditions for voltage-induced precessional switching in a conically magnetized free layer, a novel insight for magnetic memory devices.

Findings

Voltage pulses can switch magnetization at zero bias.

Analytical expressions for switching conditions are derived.

Potential applications in voltage-controlled nonvolatile memory.

Abstract

Voltage-induced magnetization dynamics in a conically magnetized free layer with an elliptic cylinder shape is theoretically studied on the basis of the macrospin model. It is found that an application of voltage pulse can induce the precessional switching of magnetization even at zero-bias magnetic field, which is of substantial importance for device applications such as voltage-controlled nonvolatile memory. Analytical expressions of the conditions for precessional switching are derived.