Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure
V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, M. Ryzhii, T. Otsuji,, V. Mitin, M. S. Shur, and V. Ryzhii
TL;DR
This paper analyzes interband HgTe-CdHgTe quantum-well infrared photodetectors, highlighting their high photoconductive gain and potential advantages over traditional photodetectors and heterostructures.
Contribution
It provides a theoretical calculation of the characteristics of HgTe-CdHgTe QWIPs, demonstrating their potential benefits and high gain capabilities.
Findings
High photoconductive gain due to low electron capture probability
Significant advantages over conventional CdHgTe photodetectors
Potential for improved infrared detection performance
Abstract
We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the AB heterostructures.
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Taxonomy
TopicsAdvanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices