Magnetoresistance and valley degree of freedom in bulk bismuth
Zengwei Zhu, Beno\^it Fauqu\'e, Kamran Behnia, and Yuki Fuseya

TL;DR
This paper reviews magnetoresistance phenomena in bulk bismuth, highlighting how magnetic field orientation affects valley contributions, induces valley polarization, and leads to complete valley depletion without a metal-insulator transition.
Contribution
It provides a comprehensive understanding of valley-dependent magnetoresistance in bismuth, including effects of magnetic field orientation, high-field phenomena, and resolution of longstanding issues with spin-orbit coupling and crystal twinning.
Findings
Magnetic field orientation acts as a valley valve in bismuth.
Valley polarization is induced by magnetic fields near the quantum limit.
Complete valley depletion occurs without a metal-insulator transition.
Abstract
In this paper, we first review fundamental aspects of magnetoresistance in multi-valley systems based on the semiclassical theory. Then we will review experimental evidence and theoretical understanding of magnetoresistance in an archetypal multi-valley system, where the electric conductivity is set by the sum of the contributions of different valleys. Bulk bismuth has three valleys with an extremely anisotropic effective mass. As a consequence, the magnetoconductivity in each valley is extremely sensitive to the orientation of the magnetic field. Therefore, a rotating magnetic field plays the role of a valley valve tuning the contribution of each valley to the total conductivity. In addition to this simple semi-classical effect, other phenomena arise in the high-field limit as a consequence of an intricate Landau spectrum. In the vicinity of the quantum limit, the orientation of…
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