Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

TL;DR

This study uses advanced X-ray photoemission spectroscopy to resolve the element- and momentum-specific electronic structure of manganese-doped gallium arsenide, shedding light on its ferromagnetic properties.

Contribution

It introduces a method for element- and momentum-resolved electronic structure analysis in dilute magnetic semiconductors, clarifying the electronic structure of Mn-doped GaAs.

Findings

Excellent agreement with element-projected Bloch spectral functions

Clarification of the electronic structure of Mn-doped GaAs

Technique broadly applicable to multi-element materials

Abstract

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.