Hole Mobility Model for Si Double-Gate Junctionless Transistors

TL;DR

This paper presents a physics-based model for calculating hole mobility in ultra-thin double-gate junctionless transistors, solving complex equations self-consistently and considering various scattering mechanisms.

Contribution

It introduces a novel self-consistent approach combining six-band k·p and Poisson equations to accurately model hole mobility in these transistors.

Findings

Wave-functions and energies stored in look-up tables.

Mobility calculated considering impurity, phonon, and surface roughness scattering.

Initial benchmark results demonstrate model validity.

Abstract

In this work, a physics based model is developed to calculate the hole mobility of ultra-thin-body double-gate junctionless transistors. Six-band $k\cdot p$ Schr\"{o}dinger equation and Poisson equation are solved self-consistently. The obtained wave-functions and energies are stored in look-up tables. Hole mobility can be derived using the Kubo-Greenwood formula accounting for impurity, acoustic and optical phonon, and surface roughness scattering. Initial benchmark results are shown.