Solution to the hole-doping problem and tunable quantum Hall effect in Bi$_{2}$Se$_{3}$ thin films

TL;DR

This paper solves the long-standing n-type doping issue in Bi₂Se₃ thin films by interfacial engineering, enabling p-type doping and the first tunable quantum Hall effect studies, revealing asymmetric signatures and competing states near the zeroth Landau level.

Contribution

It introduces an interfacial engineering method to achieve p-type Bi₂Se₃ thin films and demonstrates tunable quantum Hall effects in these films, advancing topological device research.

Findings

Successful p-type doping of Bi₂Se₃ thin films

Observation of tunable quantum Hall effect

Detection of asymmetric QHE signatures and competing states

Abstract

Bi$_{2}$Se$_{3}$, one of the most widely studied topological insulators (TIs), is naturally electron-doped due to n-type native defects. However, many years of efforts to achieve p-type Bi$_{2}$Se$_{3}$ thin films have failed so far. Here, we provide a solution to this long-standing problem, showing that the main culprit has been the high density of interfacial defects. By suppressing these defects through an interfacial engineering scheme, we have successfully implemented p-type Bi$_{2}$Se$_{3}$ thin films down to the thinnest topological regime. On this platform, we present the first tunable quantum Hall effect (QHE) study in Bi$_{2}$Se$_{3}$ thin films, and reveal not only significantly asymmetric QHE signatures across the Dirac point but also the presence of competing anomalous states near the zeroth Landau level. The availability of doping tunable Bi$_{2}$Se$_{3}$ thin films will now make it possible to implement various topological quantum devices, previously inaccessible.