Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T$^{\prime}$-MoS$_{2}$

TL;DR

This study investigates how carrier transport in n-butyllithium-treated MoS2 flakes follows Efros-Shklovskii variable range hopping, revealing insights into localization length, hopping length, dielectric constant, and contact resistance behavior.

Contribution

It provides experimental analysis of variable range hopping conduction and contact resistance in treated MoS2, with estimations of key transport parameters.

Findings

Resistance follows Efros-Shklovskii VRH mechanism

Localization and hopping lengths are estimated

Contact resistance increases at lower temperatures

Abstract

We have studied temperature- and electric-field dependent carrier transport in single flakes of MoS$_{2}$ treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, comparison between two- and four-probe measurements yield a contact resistance that increases significantly with decreasing temperature.