Spin-selective metal insulator transition in two dimensions
Shashikant Singh Kunwar, Prabuddha B. Chakraborty, and R. Narayanan

TL;DR
This paper investigates a spin-selective disorder in a two-dimensional Hubbard model, revealing a sensitive metal-insulator transition influenced by electron filling, using Quantum Monte Carlo simulations.
Contribution
It introduces a study of spin-selective disorder effects on localization transition in 2D Hubbard models with Quantum Monte Carlo methods.
Findings
Possible metal-insulator transition identified
Transition is highly sensitive to filling fraction
Quantum Monte Carlo effectively analyzes spin-selective disorder
Abstract
The phenomenon of Anderson localization wherein non-interacting electrons are localized by quenched impurities is a subject matter that has been extremely well studied. However, localization transition under the combined influence of interaction and quenched disorder is less well understood. In this context we study the localization transition in a two-dimensional Hubbard model under the influence of a spin-selective disorder i.e, disorder which is operational on just one of the spin-species. The model is analyzed by laying recourse to a Quantum Monte Carlo based scheme. Using this approach we show the possibility of a metal-insulator transition. However, we will show that this metal-insulator transition is extremely sensitive to the filling-fraction inherent in the system.
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Taxonomy
TopicsQuantum and electron transport phenomena · Surface and Thin Film Phenomena · Magnetic properties of thin films
