Electronic band structure engineering in InAs/InSbAs and InSb/InSbAs superlattice heterostructures

TL;DR

This study uses ab initio calculations to explore how varying layer thickness in InAs/InSbAs and InSb/InSbAs superlattice heterostructures affects their electronic band structures, with implications for tunable electronic properties.

Contribution

It provides a detailed theoretical analysis of how layer thickness modulation influences band gaps and electronic characteristics in specific superlattice heterostructures.

Findings

Layer thickness variation alters band gap nature (direct or indirect).

Heterostructures remain semiconductors despite complex compositions.

Modulation can change the number of carrier pockets.

Abstract

We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb_(0.5)As_(0.5). This alloy part of the heterostructures is a topological semimetal. The other component of each system is a semiconductor, zincblende-InSb, and wurtzite-InAs. Both heterostructures are semiconductors. Our theoretical analysis predicts that the variation in the thickness of the InSb layer in InSb/InSb_(0.5)As_(0.5) heterostructure renders altered band gaps with different characteristics (i.e. direct or indirect). The study holds promise for fabricating heterostructures, in which the modulation of the thickness of the layers changes the number of carrier pockets in these systems.