Gamma Radiation Spectra of 1200 MeV Electrons in Thick Beryllium, Silicon, and Tungsten Single Crystals

TL;DR

This study measures gamma radiation spectra of 1200 MeV electrons in various thick single crystals of beryllium, silicon, and tungsten, providing data useful for developing intense gamma-ray sources in radiation technology.

Contribution

It provides new experimental gamma spectra data for electrons in thick single crystals along different crystallographic axes, expanding previous knowledge.

Findings

Gamma spectra measured for electrons in beryllium, silicon, tungsten crystals.

Spectral-angular distributions obtained for silicon crystals along <100>, <110>, <111>.

Results support development of gamma-ray sources for radiation technologies.

Abstract

Gamma radiation spectra of 1200 MeV electrons in the single crystals of the beryllium 1.2 mm thick, silicon 1.5 mm and 15.0 mm thick and tungsten 1.18 mm thick along of the crystallographic axes were measured. Also spectral-angular distributions of gamma radiation in the silicon single crystals 1.5 mm thick along of the crystallographic axes <100>, <110> and <111> were measured. On the basis of these measurements the radiation spectra for the different solid angles up to 6.97*10-6 sr were obtained. Gamma radiation spectra of the electrons with energy 1200, 600 and 300 MeV in the Si single crystals 15.0 mm thick and the W thick 3.0 mm also were measured. The above results complement the previously obtained experimental and theoretical data and can be used to create a source of intense gamma-ray beams for radiation technologies.