Effect of in-situ electric field assisted growth on anti-phase boundaries in epitaxial Fe3O4 thin films on MgO

TL;DR

This study demonstrates that applying an in-situ electric field during the growth of Fe3O4 thin films reduces anti-phase boundaries and modifies their magnetic properties, enabling the fabrication of films with properties similar to APB-free materials.

Contribution

The paper introduces a novel electric field assisted growth method to control anti-phase boundary formation in epitaxial Fe3O4 thin films, improving their magnetic and electronic properties.

Findings

Electric field reduces AF interactions across APBs.

APB-free like properties achieved in Fe3O4 films.

Enhanced surface mobility influences APB density.

Abstract

Anti-phase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. The presence of APBs in epitaxial films of the inverse spinel Fe3O4 alters their electronic and magnetic properties due to strong antiferromagnetic (AF) interactions across these boundaries. The effect of using in-situ electric field assisted growth on the migration of APBs in hetero epitaxial Fe3O4(100)/MgO(100) thin films have been explored in the present work. The electric field assisted growth is found to reduce the AF interactions across APBs and as a consequence APBs free thin film like properties are obtained, which have been probed by electronic, magnetic and structural characterization. An increase in energy associated with the nucleation and/or early stage of the growth and, therefore, a corresponding increase in surface mobility of the ad-atoms play a critical role in controlling the density of APBs. This innovative technique can be employed to grow epitaxial spinel thin films with controlled AF interactions across APBs.