EXAFS and electrical studies of new narrow-gap semiconductors: InTe$_{1-x}$Se$_x$ and In$_{1-x}$Ga$_x$Te

TL;DR

This study investigates the local atomic environment and electrical properties of new narrow-gap semiconductors InTe$_{1-x}$Se$_x$ and In$_{1-x}$Ga$_x$Te, revealing substitutional impurity behavior and semiconductor transitions at specific compositions.

Contribution

It provides detailed EXAFS analysis of atom positions and electrical characterization of the semiconducting behavior in InTe-based solid solutions, highlighting composition-dependent properties.

Findings

Atoms are substitutional impurities in the lattice.

Semiconducting behavior appears at specific Se and Ga concentrations.

Local atomic environment influences electrical properties.

Abstract

The local environment of Ga, Se, and Tl atoms in InTe-based solid solutions was studied by EXAFS technique. It was shown that all investigated atoms are substitutional impurities, which enter the In(1), Te, and In(2) positions in the InTe structure, respectively. The electrical measurements revealed that In$_{1-x}$Ga$_x$Te and InTe$_{1-x}$Se$_x$ solid solutions become semiconductors at $x>0.24$ and $x>0.15$, respectively.