Spectroscopic study of native defects in the semiconductor to metal phase transition in V2O5 nanostructure

TL;DR

This study investigates the semiconductor to metal transition in V2O5 nanostructures, revealing defect-related electronic changes and oxygen vacancies that drive the transition without structural alterations.

Contribution

It provides a detailed spectroscopic analysis of native defects and electronic structure changes associated with the SMT in V2O5 nanostructures, clarifying the transition's origin.

Findings

SMT confirmed in V2O5 nanostructures without structural change

Oxygen vacancy-related peaks appear above transition temperature

Downward shift of conduction bands indicates defect-driven metallic behavior

Abstract

Vanadium is a transition metal with multiple oxidation states and V2O5 is the most stable form among them. Besides catalysis, chemical sensing and photo-chromatic applications, V2O5 is also reported to exhibit a semiconductor to metal transition (SMT) at a temperature range of 530-560K. Even though, there are debates in using the term 'SMT' for V2O5, the metallic behavior above transition temperature and its origin are of great interests in the scientific community. In this study, V2O5 nanostructures were deposited on SiO2/Si substrate by vapour transport method using Au as catalyst. Temperature dependent electrical measurement confirms the SMT in V2O5 without any structural change. Temperature dependent photoluminescence analysis proves the appearance of oxygen vacancy related peaks due to reduction of V2O5 above the transition temperature, as also inferred from temperature dependent Raman spectroscopic studies. The newly evolved defect levels in the V2O5 electronic structure with increasing temperature is also understood from the downward shift of the bottom most split-off conduction bands due to breakdown of pd{\pi} bonds leading to metallic behavior in V2O5 above the transition temperature.