Robust memristors based on layered two-dimensional materials
Miao Wang, Songhua Cai, Chen Pan, Chenyu Wang, Xiaojuan Lian, Ye Zhuo,, Kang Xu, Tianjun Cao, Xiaoqing Pan, Baigeng Wang, Shijun Liang, J. Joshua, Yang, Peng Wang, Feng Miao

TL;DR
This paper demonstrates the first robust memristors based on layered 2D material heterostructures, exhibiting high thermal stability, excellent switching performance, and mechanical flexibility, advancing the design of durable electronic devices.
Contribution
It introduces a novel memristor design using van der Waals heterostructures of layered 2D materials with enhanced stability and performance, not previously achieved.
Findings
Memristors with endurance up to 10^7 cycles
Record-high operating temperature of 340°C
Demonstrated mechanical flexibility with over 1000 bending cycles
Abstract
Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining superior properties of each component, such heterostructure also provides possible solutions to address various challenges of the electronic devices, especially those with vertical multilayered structures. Here, we report the realization of robust memristors for the first time based on van der Waals heterostructure of fully layered 2D materials (graphene/MoS2-xOx/graphene) and demonstrate a good thermal stability lacking in traditional memristors. Such devices have shown excellent switching performance with endurance up to 107 and a record-high operating temperature up to 340oC. By combining in situ high-resolution TEM and STEM studies, we have shown that the MoS2-xOx switching layer, together with the graphene…
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