Extreme-ultraviolet light source for lithography based on an expanding jet of dense xenon plasma supported by microwaves

TL;DR

This paper presents a novel EUV light source concept using a microwave-supported dense xenon plasma jet, focusing on efficiency and emission trapping to improve lithography applications.

Contribution

It introduces a new EUV source design based on non-equilibrium microwave discharge in xenon plasma with analysis of efficiency and emission trapping effects.

Findings

Calculated conversion efficiency of microwave to EUV light.

Identified physical constraints affecting device performance.

Highlighted the importance of emission trapping inside plasma for efficiency.

Abstract

We discuss a concept of a point-like source of the extreme ultraviolet (EUV) light based on a non-equilibrium microwave discharge in expanding jet of dense xenon plasma with multiply charged ions. A conversion efficiency of microwave radiation to EUV light is calculated, and physical constraints, and opportunities for future devices are considered. Special attention is given to trapping of spontaneous line emission inside a radiating plasma spot that significantly influences the efficiency of EUV light source.