Possible High Thermoelectric Power in Semiconducting Carbon Nanotubes ~A Case Study of Doped One-Dimensional Semiconductors~

TL;DR

This study theoretically explores the potential for high thermoelectric power in doped one-dimensional semiconductors, specifically nitrogen-doped carbon nanotubes, highlighting the importance of band-edge engineering for optimizing thermoelectric performance.

Contribution

It provides a theoretical analysis of thermoelectric properties in doped 1D semiconductors, emphasizing the role of band-edge effects and carrier density in enhancing thermoelectric power.

Findings

N-doped CNTs show high thermoelectric power factors due to 1D characteristics.

Maximum power factor occurs near the band edges in semiconducting CNTs.

Band-edge engineering is key for developing high-performance thermoelectric materials.

Abstract

We have theoretically investigated the thermoelectric properties of impurity-doped one-dimensional semiconductors, focusing on nitrogen-substituted (N-substituted) carbon nanotubes (CNTs), using the Kubo formula combined with a self-consistent $t$-matrix approximation. N-substituted CNTs exhibit extremely high thermoelectric power factor ($PF$) values originating from a characteristic of one-dimensional materials where decrease in the carrier density increase both the electrical conductivity and the Seebeck coefficient in the low-N regime. The chemical potential dependence of the $PF$ values of semiconducting CNTs has also been studied as a field-effect transistor and it turns out that the $PF$ values show a noticeable maximum in the vicinity of the band edges. This result demonstrates that "band-edge engineering" will be crucial for solid development of high-performance thermoelectric materials.