Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation

TL;DR

This study demonstrates that YBi and LuBi semimetals exhibit extreme magnetoresistance and resistivity plateaus primarily due to nearly perfect electron-hole compensation, supported by experimental and theoretical analysis.

Contribution

It reveals that the magnetoresistance and resistivity plateau in YBi and LuBi are caused by carrier compensation rather than topological effects, supported by comprehensive experimental and theoretical data.

Findings

Magnetoresistance reaches 10,000% in YBi at 9T

Resistivity plateau explained by Kohler scaling

Fermi surface shows nearly equal electron and hole populations

Abstract

Monobismuthides of yttrium and lutetium are shown as new representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateau. At low temperatures and in magnetic field of 9T the magnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBi and LuBi, respectively. Our thorough examination of electron transport properties of both compounds show that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. Anisotropic multi-band model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov-de Haas oscillations analysis also confirm that Fermi surface of each compound contains almost equal amounts of holes and electrons. First-principle calculations of electronic band structure are in a very good agreement with the experimental data.