Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

TL;DR

This paper investigates how gate voltages in double-gate a-InGaZnO thin-film transistors influence quantum interference effects, revealing a universal behavior of weak localization and antilocalization contributions that is resilient to interface disorder.

Contribution

It demonstrates control over quantum interference in thin-film transistors and uncovers a universal, disorder-robust dependence of WL and WAL on channel conductivity.

Findings

Universal dependence of WL and WAL on channel conductivity

Control of quantum interference via gate voltages

Robustness against interface disorder

Abstract

We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double- gate amorphous InGaZnO thin-film transistors. Our study unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.