Giant Enhancement of Intrinsic Spin Hall Conductivity in $\beta$ Tungsten via Substitutional Doping
Xuelei Sui, Chong Wang, Jinwoong Kim, Jianfeng Wang, S. H. Rhim,, Wenhui Duan, and Nicholas Kioussis

TL;DR
This study demonstrates that substitutional doping of $eta$-W with Ta significantly enhances its intrinsic spin Hall conductivity, offering a promising route to improve charge-to-spin current conversion in spintronic devices.
Contribution
The paper reveals that alloying $eta$-W with Ta can substantially increase its spin Hall conductivity, providing new insights into material engineering for spintronics.
Findings
Pristine $eta$-W has 60% higher SHC than $ ho$-W.
Ta alloying at 12.5% enhances spin Hall angle to approximately -0.5.
The enhancement is due to the interplay of SHC and conductivity with Fermi level.
Abstract
A key challenge in manipulating the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque is to identify materials that exhibit an efficient charge-to-spin current conversion. Ab initio electronic structure calculations reveal that the intrinsic spin Hall conductivity (SHC) for pristine -W is about sixty percent larger than that of -W. More importantly, we demonstrate that the SHC of -W can be enhanced via Ta alloying. This is corroborated by spin Berry curvature calculations of WTa ( 12.5%) alloys which show a giant enhancement of spin Hall angle of up to . The underlying mechanism is the synergistic behavior of the SHC and longitudinal conductivity with Fermi level position. These findings, not only pave the way for enhancing the intrinsic spin Hall effect in -W, but also provide new guidelines…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsAdvancements in Battery Materials · Surface and Thin Film Phenomena · Semiconductor materials and interfaces
