Stabilizing a high-pressure phase in InSb at ambient conditions with a laser-driven pressure pulse
A. Jarnac (1, 2), Xiaocui Wang (2), A. U. J Bengtsson (2), M. Burza, (1), J. C. Ekstrom (2), H. Enquist (1), A. Jurgilaitis (1), N. Kretzschmar, (3), A. I. H. Persson (2), C. M. Tu (2), M. Wulff (3), F. Dorchies (4), and, J. Larsson (1, 2) ((1) MAX IV Laboratory, Lund University

TL;DR
This study demonstrates the stabilization of the high-pressure orthorhombic phase of InSb at ambient conditions using a laser-driven pressure pulse, enabling new possibilities for material phase control.
Contribution
The paper introduces a novel method to stabilize high-pressure InSb-III phase at ambient conditions via ultrashort laser-generated pressure pulses.
Findings
InSb-III phase stabilized at ambient conditions.
Phase transition driven by laser-generated non-hydrostatic pressure.
Transition occurs in preferred orientations locked to initial crystal orientation.
Abstract
In this letter, we describe the stabilization of indium antimonide (InSb) in the high-pressure orthorhombic phase (InSb-III) at ambient conditions. Until now, InSb-III has only been observed above 9 GPa, or at around 3 GPa as a metastable structure during the phase transition from cubic zinc blende (InSb-I) to orthorhombic InSb-IV. The crystalline phase transition from InSb-I to InSb-III was driven by an ultrashort, laser-generated, non-hydrostatic pressure pulse. The transition occurred in preferred orientations locked to the initial orientation of the InSb-I crystal, breaking the symmetry of the InSb-I cubic cell to form the InSb-III orthorhombic cell.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Integrated Circuits and Semiconductor Failure Analysis
