Theoretical prediction of a two-dimensional intrinsic double-metal ferromagnetic semiconductor MnCoO4
Tiantian Xiao, Guo Wang, Yi Liao

TL;DR
This paper predicts a new two-dimensional ferromagnetic semiconductor MnCoO4 with high stability, sizable spin gaps, and a Curie temperature potentially suitable for spintronic applications, based on density functional theory and Monte Carlo simulations.
Contribution
The study provides the first theoretical prediction of MnCoO4 as an intrinsic 2D ferromagnetic semiconductor with tunable magnetic properties under strain.
Findings
MnCoO4 is predicted to be an intrinsic ferromagnetic semiconductor.
The Curie temperature can be increased to 230 K under tensile strain.
MnCoO4 exhibits high stability and sizable spin gaps suitable for spintronics.
Abstract
A two-dimensional double-metal oxide MnCoO4 was predicted to be an intrinsic ferromagnetic semiconductor by using density functional theory. The low cleavage energy 0.36 Jm-2, which is similar to that of graphene, indicates that it can be easily exfoliated. The bulk structure has an antiferromagnetic ground state while the ferromagnetic configuration is the ground state against two antiferromagnetic and three ferrimagnetic configurations in the two-dimensional structure. The spin flip gaps for valence and conduction bands are 0.41 and 0.10 eV calculated with the HSE06 density functional, which are much larger than the thermal energy at room temperature. The Curie temperature obtained from the Monte Carlo simulation is 40 K. Under 9% tensile strain, the spin flip gaps increase largely so that the spin flip can be suppressed. The direct antiferromagnetic coupling between the Mn and Co…
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