Metal - TiO2 contacts: An electrical characterization study

TL;DR

This study systematically characterizes the electrical interface properties of Metal-TiO2-Metal structures, revealing how electrode materials influence device behavior and providing guidance for material selection in metal-oxide electronics.

Contribution

It offers a comprehensive quantitative analysis of electrode effects and coupling in Metal-TiO2-Metal structures, which was previously underexplored.

Findings

Electrode material significantly affects I-V characteristics.

Top/bottom electrode coupling influences device performance.

Temperature-dependent behavior elucidates contact mechanisms.

Abstract

The electrical properties of thin TiO2 films have recently been extensively exploited towards enabling a variety for metal-oxide electron devices: unipolar/bipolar semiconductor devices and/or memristors. In such efforts, investigations on the role of TiO2 as active material have been the main focus, however, electrode materials are equally important. In this work, we address this need by presenting a systematic quantitative electrical characterisation study on the interface characteristics of Metal-TiO2-Metal structures. Our study employs typical contact materials that are used both as top and bottom electrodes in a Metal-TiO2-Metal setting. This allows investigating the effect of Metal-TiO2 contacts as well as holistically studying an electrode's influence to the opposite interface, referred to as top/bottom electrodes coupling. Our methodology comprises the recording of current-voltage (I-V) characteristics from a variety of solid-state prototypes in the temperature range of 300-350 K and by analysing them through appropriate modelling. Clear field and temperature dependent signature plots were also obtained towards shinning more light on the role of each material as top/bottom electrodes in Metal-TiO2-Metal structures. Our results provide a useful database for selecting appropriate electrode materials in Metal-TiO2 devices, offering new insights in metal-oxide electronics applications.