Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators

TL;DR

This paper reports the first experimental observation of spin-orbit magnetoresistance (SOMR) induced by Rashba interaction at a metal/insulator interface, achieved through interface engineering with nanoscale Pt islands on Cu/YIG bilayers.

Contribution

The study provides the first experimental evidence of interface-induced SOMR in metal/insulator bilayers, highlighting the role of interface engineering with Pt islands.

Findings

SOMR observed in Cu/Pt/YIG bilayers with Pt islands.

SOMR disappears without Pt islands or interface decoration.

Numerical simulations agree with experimental angular and thickness dependence.

Abstract

A magnetoresistance effect induced by the Rashba spin-orbit interaction was predicted, but not yet observed, in bilayers consisting of normal metal and ferromagnetic insulator. Here, we present an experimental observation of this new type of spin-orbit magnetoresistance (SOMR) effect in a bilayer structure Cu[Pt]/Y3Fe5O12 (YIG), where the Cu/YIG interface is decorated with nanosize Pt islands. This new MR is apparently not caused by the bulk spin-orbit interaction because of the negligible spin-orbit interaction in Cu and the discontinuity of the Pt islands. This SOMR disappears when the Pt islands are absent or located away from the Cu/YIG interface, therefore we can unambiguously ascribe it to the Rashba spin-orbit interaction at the interface enhanced by the Pt decoration. The numerical Boltzmann simulations are consistent with the experimental SOMR results in the angular dependence of magnetic field and the Cu thickness dependence. Our finding demonstrates the realization of the spin manipulation by interface engineering.