Effect of Low-Frequency Signal On Nanoscale Memristor Device

TL;DR

This study explores how low-frequency signals influence the behavior of nanoscale memristor devices, revealing the significance of input frequency on their electrical and magnetic properties.

Contribution

It provides new insights into the frequency-dependent dynamics of nanoscale memristors, which were not thoroughly examined before.

Findings

Frequency affects memristor current-voltage characteristics.

Low-frequency signals influence charge-magnetic flux relations.

Device dynamics are significantly impacted by input frequency.

Abstract

In the present report, we have investigated the effect of the low-frequency signal on nanoscale memristor device. The frequency is varied from 2 Hz to 10 Hz and the corresponding effect on the current-voltage characteristics, time domain state variable, charge-magnetic flux relation, memristance-charge relation, memristance-voltage characteristics and memristance-magnetic flux relation are studied. The results clearly suggested that the frequency of the input stimulus plays an important role in the device dynamics.