A two-channel model for Spin-relaxation noise

TL;DR

This paper introduces a two-channel resistor model to simulate spin transport and noise in graphene, accurately reproducing experimental spin signals and identifying spin-relaxation resistances as the main source of spin-dependent 1/f noise.

Contribution

The paper presents a novel two-channel resistor model applicable to spin transport and noise simulation in graphene, linking spin-relaxation resistances to 1/f noise.

Findings

Model accurately reproduces experimental spin signals.

Spin-relaxation resistances are the main source of spin-dependent 1/f noise.

Simulation works for both local and nonlocal measurement schemes.

Abstract

We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin- dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise.