CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance

TL;DR

This paper introduces a novel bilayer heterojunction solar cell combining perovskite with GeSe, significantly boosting efficiency by enhancing light absorption and current density, offering a promising approach for high-performance solar energy devices.

Contribution

The study demonstrates that integrating GeSe with perovskite in a bilayer heterojunction significantly improves solar cell efficiency, surpassing traditional single-layer perovskite cells.

Findings

Short circuit current density doubled

Power conversion efficiency increased by 42.7%

GeSe outperforms other semiconductors in absorption

Abstract

Perovskite (CH3NH3PbI3) solar cells have made significant advances recently. In this paper, we propose a bilayer heterojunction solar cell comprised of a perovskite layer combining with a IV-VI group semiconductor layer, which can give a conversion efficiency even higher than the conventional perovskite solar cell. Such a scheme uses a property that the semiconductor layer with a direct band gap can be better in absorption of long wavelength light and is complementary to the perovskite layer. We studied the semiconducting layers such as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is the best, where the optical absorption efficiency in the perovskite/GeSe solar cell is dramatically increased. It turns out that the short circuit current density is enhanced 100% and the power conversion efficiency is promoted 42.7% (to a high value of 23.77%) larger than that in a solar cell with only single perovskite layer. The power conversion efficiency can be further promoted so long as the fill factor and open-circuit voltage are improved. This strategy opens a new way on developing the solar cells with high performance and practical applications.