Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices

TL;DR

This study investigates the radiation resilience of 1T-TaS2 charge-density-wave devices, demonstrating minimal threshold voltage change under high ionizing radiation doses, indicating their suitability for high-radiation environments.

Contribution

It provides the first evaluation of total-ionizing-dose effects on 1T-TaS2 threshold switching devices, showing their robustness up to 1 Mrad(SiO2).

Findings

Threshold voltage changed less than 2% after irradiation.

Persistent oscillations observed throughout irradiation.

High intrinsic carrier concentration contributes to radiation hardness.

Abstract

The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T-TaS2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T-TaS2, are promising for applications in high radiation environments.