Near-deterministic activation of room temperature quantum emitters in hexagonal boron nitride

TL;DR

This paper demonstrates the creation of stable, room-temperature quantum emitters in hexagonal boron nitride using strain engineering, enabling on-demand single photon sources for quantum technologies.

Contribution

It introduces a method to activate and control quantum emitters in hBN at room temperature via strain engineering, advancing quantum photonic device development.

Findings

Quantum emitters are stabilized at room temperature in hBN.

Strain induces carrier trapping in deformation potential wells.

Emitter activation can be manipulated through strain and electrostatic control.

Abstract

Applications of quantum science to computing, cryptography and imaging are on their way to becoming key next generation technologies. Owing to the high-speed transmission and exceptional noise properties of photons, quantum photonic architectures are likely to play a central role. A long-standing hurdle, however, has been the realization of robust, device-compatible single photon sources that can be activated and controlled on demand. Here we use strain engineering to create large arrays of quantum emitters in two-dimensional hexagonal boron nitride (hBN). The large energy gap inherent to this Van der Waals material stabilizes the emitters at room temperature within nanoscale regions defined by substrate-induced deformation of the flake. Combining analytical and numerical modeling we show that emitter activation is likely the result of carrier trapping in deformation potential wells localized near the points where the hBN flake reaches the highest curvature. These findings, therefore, hint at novel opportunities for the manipulation of single photon sources through the combined control of strain and external electrostatic potentials under ambient conditions.