P-doped organic semiconductor: potential replacement for PEDOT:PSS in organic photodetectors
J. Herrbach, A. Revaux, D. Vuillaume, A. Kahn

TL;DR
This paper introduces a p-doped organic semiconductor layer as a stable, efficient alternative to PEDOT:PSS in organic photodetectors, improving device lifetime and performance without requiring layer localization.
Contribution
The study demonstrates that a p-doped polymer layer can replace PEDOT:PSS in organic photodetectors, offering comparable or better performance and enhanced stability.
Findings
Achieved similar device performance with the doped layer as with PEDOT:PSS.
Detected a high device detectivity of 1.9x10^13 cm(Hz)^1/2(W)^-1.
Eliminated the need for layer localization, simplifying fabrication.
Abstract
In this work we present an alternative to the use of PEDOT:PSS as hole transport and electron blocking layer in organic photodetectors processed by solution. As PEDOT:PSS is known to be sensitive to humidity, oxygen and UV, removing this layer is essential for lifetime improvements. As a first step to achieving this goal, we need to find an alternative layer that fulfills the same role in order to obtain a working diode with similar or better performance. As a replacement, a layer of Poly((4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b)dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno(3,4-b]thiophene-)-2-6-diyl)) (PBDTTT-c) p-doped with the dopant tris-(1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd-COCF3)3) is used. This p-doped layer effectively lowers the hole injection barrier, and the low electron affinity of the polymer prevents the injection of electrons…
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