Universal Scaling in Intrinsic Resistivity of Two-Dimensional Metal Borophene

TL;DR

This study provides a first-principles analysis of borophene's intrinsic electrical resistivity, revealing universal temperature scaling and tunability, which advances understanding of its transport properties for potential electronic applications.

Contribution

It offers the first comprehensive theoretical investigation of borophene's resistivity, highlighting universal scaling behavior and the influence of atomic structure and carrier density.

Findings

Resistivity scales as T^4 at low temperatures

Resistivity increases linearly above 100 K

Resistivity can be tuned by carrier density

Abstract

Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties such as the emergence of superconductivity and Dirac Fermions. However, quantitative understanding of intrinsic electrical transport of borophene has not been achieved. Here, we report a comprehensive first-principles study on electron-phonon driven intrinsic electrical resistivity (\r{ho}) of emerging borophene structures. We find that the resistivity is highly dependent on the atomic structures and electron density of borophene. Low-temperature resistivity of borophene \r{ho} exhibits a universal scaling behavior, which increases rapidly with temperature T (\r{ho}~T^4), while \r{ho} increases linearly for a large temperature window T > 100 K. It is observed that this universal behavior of intrinsic resistivity is well described by Bloch-Gr\"unesisen model. Different from graphene and conventional three-dimensional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities while the Bloch-Gr\"unesisen temperature is nearly fixed at ~100 K. Our work suggests monolayer boron can serve as an intriguing platform for realizing high-tunable two-dimensional electronic devices.