Magnetic properties, spin waves and interaction between spin excitations and 2D electrons in interface layer in Y3Fe5O12 / AlOx / GaAs-heterostructures

TL;DR

This study investigates the magnetic properties and spin wave interactions in YIG/GaAs heterostructures, revealing how spin excitations influence 2DEG currents and how light affects the FMR spectrum.

Contribution

It presents the synthesis of YIG films on GaAs substrates and explores the interaction between spin excitations and 2D electrons in heterostructures, including effects of light illumination.

Findings

FMR linewidths are mainly due to magnetic inhomogeneity.

Spin excitations significantly influence 2DEG current.

Light illumination causes notable changes in FMR spectra.

Abstract

We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on GaAs-based substrates and present results of the investigation of ferromagnetic resonance (FMR), spin wave propagation and interaction between spin excitations and 2D electrons in interface layer in YIG / AlOx / GaAs-heterostructures. It is found that the contribution of the relaxation process to the FMR linewidth is about 2 % of the linewidth \Delta H. At the same time, for all samples FMR linewidths are high. Sputtered YIG films have magnetic inhomogeneity, which gives the main contribution to the FMR linewidth. Transistor structures with two-dimensional electron gas (2DEG) channels in AlOx / GaAs interface governed by YIG-film spin excitations are designed. An effective influence of spin excitations on the current flowing through the GaAs 2DEG channel is observed. Light illumination results in essential changes in the FMR spectrum. It is found that an increase of the 2DEG current leads to an inverse effect, which represents essential changes in the FMR spectrum.