Large valley splitting in monolayer WS$_2$ by proximity coupling to an insulating antiferromagnetic substrate

TL;DR

This study demonstrates that monolayer WS$_2$ on an insulating antiferromagnetic substrate exhibits a large valley splitting of 214 meV due to magnetic proximity, enabling electrical detection of valley polarization for valleytronics.

Contribution

First-principles calculations reveal large, tunable valley splitting in WS$_2$ via magnetic proximity to MnO, with potential for electrical valley detection in valleytronic devices.

Findings

Valley splitting of 214 meV induced in WS$_2$

Valley and spin flip upon magnetic reversal of MnO

Generation of spin and valley polarized anomalous Hall current

Abstract

Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides by magnetic proximity coupling to an insulating antiferromagnetic substrate. As an example, we perform first-principles calculations to investigate the electronic structures of monolayer WS$_2$ on the MnO(111) surface. Our calculation results suggest that a large valley splitting of 214 meV, which corresponds to a Zeeman magnetic field of 1516 T, is induced in the valence band of monolayer WS$_2$. The magnitude of valley splitting relies on the strength of interfacial orbital hybridization, and can be continually tuned by applying an external out-of-plane pressure and in-plane strain. More interestingly, we find that both spin and valley index will flip when the magnetic ordering of MnO is reversed. Besides, owing to the sizeable Berry curvature and time-reversal symmetry breaking in the WS$_2$/MnO heterostructure, a spin and valley polarized anomalous Hall current can be generated in the presence of an in-plane electric field, which allow one to detect valleys by the electrical approach. Our results shed light on the realization of valleytronic devices using the antiferromagnetic insulator as the substrate.