Observation of A$_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
J. M. Urban, M. Baranowski, A. Surrente, D. Wlodarczyk, A. Suchocki,, G.Long, Y. Wang, L. Klopotowski, N. Wang, D. K. Maude, P. Plochocka

TL;DR
This study reveals how hexagonal boron nitride encapsulation affects the Raman spectral features of few-layer black phosphorus, notably reducing phonon scattering and enabling the detection of a new inter-layer vibrational mode.
Contribution
It is the first experimental observation of the A$_g^1$ mode splitting in black phosphorus due to h-BN encapsulation, highlighting inter-layer interactions.
Findings
Encapsulation reduces Raman line width, indicating lower phonon scattering.
A new Raman peak ~4cm$^{-1}$ above A$_g^1$ mode is observed in trilayer and thicker flakes.
The new mode is linked to inter-layer interactions and surface atom vibration hardening.
Abstract
We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra 4cm above the A mode in trilayer and thicker flakes, which had not been observed experimentally. The newly observed mode originates from the strong black phosphorus inter-layer interaction, which induces a hardening of the surface atoms vibration with respect to the corresponding modes of the inner layers. The observation of this mode suggests a significant impact of h-BN encapsulation on the properties of black phosphorus and can serve as an indicator of the quality of its surface.
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