Current-induced spin polarization in isotropic k-cubed Rashba model: Theoretical study for p-doped semiconductor heterostructures and perovskite oxides interfaces

TL;DR

This theoretical study analyzes how an external electric field induces spin polarization in systems with isotropic k-cubed Rashba spin-orbit coupling, relevant for oxide interfaces and p-doped semiconductors, highlighting temperature effects and Berry curvature relations.

Contribution

It introduces a detailed theoretical framework for calculating temperature-dependent spin polarization in systems with isotropic k-cubed Rashba interaction, extending understanding of spin responses in complex materials.

Findings

Spin polarization depends on temperature and electric field strength.

The model links spin polarization to Berry curvature effects.

Results apply to oxide interfaces and p-doped semiconductor heterostructures.

Abstract

Using the Matsubara Green's function formalism we calculate the temperature dependence of the nonequilibrium spin polarization induced by an external electric field in the presence of spin-orbit coupling. The model Hamiltonian includes an isotropic k-cubed form of the Rashba spin-orbit interaction. Such a Hamiltonian captures the electronic and spin properties of two-dimensional electron (hole) gas at the surfaces or interfaces of transition metal oxides or in p-doped semiconductor heterostructures. The induced spin polarization is calculated for the nonmagnetic as well as magnetic electron/hole gas. Relation of the spin polarization to the Berry curvature is also discussed.