Structure and Electronic States of a Graphene Double Vacancy with an Embedded Si Dopant
Reed Nieman, Ad\'elia J. A. Aquino, Trevor P. Hardcastle, Jani, Kotakoski, Toma Susi, and Hans Lischka

TL;DR
This study uses density functional theory to analyze the structural and electronic effects of silicon doping in graphene with a double vacancy, revealing a slightly non-planar ground state and hybridization changes.
Contribution
It provides a detailed computational investigation of Si dopants in graphene vacancies, highlighting the non-planar ground state and hybridization variations, which were not previously characterized.
Findings
Non-planar structure is energetically favored by 0.22 eV.
Silicon exhibits sp^3 hybridization in the non-planar form.
Experimental spectra suggest both flat and corrugated structures may coexist.
Abstract
Silicon represents a common intrinsic impurity in graphene, commonly bonding to either three or four carbon neighbors respectively in a single or double carbon vacancy. We investigate the effect of the latter defect (Si-C) on the structural and electronic properties of graphene using density functional theory (DFT). Calculations based both on molecular models and with periodic boundary conditions have been performed. The two-carbon vacancy was constructed from pyrene (pyrene-2C) which was then expanded to circumpyrene-2C. The structural characterization of these cases revealed that the ground state is slightly non-planar, with the bonding carbons displaced from the plane by up to 0.2 {\AA}. This non-planar structure was confirmed by embedding the defect into a 108 supercell of graphene, resulting in 0.22 eV lower energy than the previously considered planar structure.…
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